MRF7S35120HSR5【PDF 1/11 页】MOSFET RF N-CH 120W NI-780S

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MRF7S35120HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for pulsed wideband applications operating at frequencies

between 3100 and 3500 MHz.

Typical Pulsed Performance: VDD

=32Volts,IDQ

= 150 mA,

Pout

= 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,

Pulse Width = 100

μsec, Duty Cycle = 20%

Power Gain ? 12 dB

Drain Efficiency ? 40%

Rise Time ? 6 ns

Fall Time ? 6 ns

Typical WiMAX Performance: VDD

=32Volts,IDQ

= 900 mA,

Pout

= 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM

3/4,4Bursts,

7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF

Power Gain ? 13 dB

Drain Efficiency ? 16%

RCE ? --33 dB (EVM ? 2.2% rms)

Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak

Power

Capable of Handling 3 dB Overdrive @ 32 Vdc

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD

Operation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 120 W Pulsed, 100

μsec Pulse Width, 20% Duty Cycle

Case Temperature 72°C, 120 W Pulsed, 500

μsec Pulse Width, 10% Duty Cycle

ZθJC

0.11

0.12

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF7S35120HSR3

3100--3500 MHz, 120 W PEAK, 32 V

PULSED

LATERAL N--CHANNEL

RF POWER MOSFET

CASE 465A--06, STYLE 1

NI--780S

Document Number: MRF7S35120HS

Rev. 3, 6/2010

Freescale Semiconductor

Technical Data

Freescale Semiconductor, Inc., 2008, 2010.

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